Veolia Provides Effluent Treatment Technology to Munksjö’s Tolosa Mill
Munksjö
has selected Veolia Water Technologies’ MBBR process for treating effluent at
its Tolosa mill in Spain.
Spain: Munksjö, a paper product manufacturer based
in Spain, has finalized Veolia Water Technologies for treating the effluent
generated at its facility in Tolosa, Spain. This industrial wastewater treatment
plant has a capacity of 200 m3/hour and would incorporate the company’s
patented AnoxKaldnes MBBR process for biological treatment and Actiflo process for
ballasted water clarification and settling. The above-mentioned technologies of
Veolia would aid in removing dissolved COD (Chemical Oxygen Demand) and
suspended particulate matter. Veolia’s technology involves the manufacturing of
Z-MBBR carriers. The 3D design permits biofilm to grow in a protected and
controlled environment until a predetermined thickness is attained. This
technology is useful for removal of COD from water and prevent formation of
calcium precipitates.
Techsci Research depicts that the rising
demand for treatment of industrial effluent is generating a large demand for
adoption of sophisticated water treatment technologies. Consequently, growing
demand for industrial wastewater treatment is projected to generate augmented
demand for water & wastewater treatment chemicals across the globe.
According to the recently published
report by TechSci Research, “Global
Water & Wastewater Treatment Chemicals Market,
By Application, By Type, Competition Forecast and Opportunities, 2011 - 2025”, global market for water and wastewater
treatment chemicals is projected to cross USD33 billion by 2025, on account of
increasing merger & acquisitions and expanding product portfolios of
companies. Robust pace of industrialization, especially across developing
countries coupled with growing focus on use of recycled water for non-drinking
applications across various end use industries is projected to augur well for
global water and wastewater treatment chemicals market in the coming years.